 |
| Operation Environment |
0 ~ 50 °C (32 ~ 140 °F);
10 ~ 95%RH (Non-condensing) |
|
Storage Environment |
-20 ~ 85 °C (4 ~ 185 °F);
10 ~ 95%RH (Non-condensing) |
| Laser
Material |
Semiconductor Laser Diode
660nm: AlGaInP
780nm: AlGaAs
808nm: AlGaAs
980nm: InGaAs/AlGaAs |
  |
| Laser
Wavelength |
660nm, 780nm, 808nm, 980nm |
| Output
Power |
50mW
~ 450mW |
| Laser Beam
Spot Size |
0.13 cm² |
| Contact Area |
5.3 cm² |
| Housing Material |
Stainless Steel |
| Cable
Connector |
D-SUB
Connector |
| Cable
Length |
170 cm |
| Handheld
Dimensions |
100(L)
x Ø26 mm; 4(L) x Ø1 in. |
| Weight |
240
g , Cable Included |